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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 12, Pages 1636–1639 (Mi phts9000)

This article is cited in 8 papers

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

Free-standing luminescent layers of porous silicon

D. N. Goryachev, L. V. Belyakov, O. M. Sreseli

Ioffe Institute, St. Petersburg

Abstract: Free-standing layers of porous silicon with a thickness ranging from 50 to 200 $\mu$m have been fabricated using an electrolyte composed of HF and acetic acid. Chemical aspects of the etching process associated with the evolution of gases that favor detachment of layers from substrates are considered. The layers exhibit stable photoluminescence in the visible spectral region observed from both of their sides.

Received: 15.06.2010
Accepted: 22.06.2010


 English version:
Semiconductors, 2010, 44:12, 1588–1591

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