V. S. Sizov, V. V. Neplokh, A. F. Tsatsul'nikov, A. V. Sakharov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, J. L. Merz, “Study of tunneling transport of carriers in structures with an InGaN/GaN active region”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 12,Pages <nobr>1615

This article is cited in 9 papers

Semiconductor structures, interfaces and surfaces

Study of tunneling transport of carriers in structures with an InGaN/GaN active region

V. S. Sizov^ab, V. V. Neplokh^a, A. F. Tsatsul'nikov^ab, A. V. Sakharov^ab, V. V. Lundin^ab, E. E. Zavarin^ab, A. E. Nikolaev^ab, A. M. Mintairov^c, J. L. Merz^c

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c EE Department, University of Notre Dame, Notre Dame, IN, 46556, USA

Abstract: Properties of light-emitting structures with an InGaN/GaN active region emitting in a range of 500–550 nm are studied. Photoluminescence of the structures is studied at various values of external bias and temperature as well as with time resolution. With the reverse bias, a decrease in the carrier lifetime associated with tunneling exit of the carriers from the active region is found. The mechanism of tunneling leakage is simulated allowing for the Boltzmann distribution of carriers by energy; it is shown that the calculated and experimental dependences agree well. It is shown that the tunneling transport exerts a considerable effect on the characteristics of structures with an InGaN/GaN active region.

Received: 01.06.2010
Accepted: 07.06.2010