This article is cited in 3 papers

Semiconductor structures, interfaces and surfaces

Enhancement of the output emission efficiency of thin-film photoluminescence composite structures based on PbSe

N. P. Anisimova, N. È. Tropina, A. N. Tropin

Girikond R&D Institute, St. Petersburg

Abstract: The opportunity to increase the output emission efficiency of PbSe-based photoluminescence structures by depositing an antireflection layer is analyzed. A model of a three-layer thin film where the central layer is formed of a composite medium is proposed to calculate the reflectance spectra of the system. In von Bruggeman’s approximation of the effective medium theory, the effective permittivity of the composite layer is calculated. The model proposed in the study is used to calculate the thickness of the arsenic chalcogenide (AsS$_4$) antireflection layer. The optimal AsS$_4$ layer thickness determined experimentally is close to the results of calculation, and the corresponding gain in the output photoluminescence efficiency is as high as 60%.

Received: 20.04.2010
Accepted: 26.04.2010

 English version: Semiconductors, 2010, 44:12, 1554–1558

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