This article is cited in 14 papers

Electronic and optical properties of semiconductors

Features of vanadium impurity states in lead telluride

A. I. Artamkin^a, A. A. Dobrovolsky^a, A. A. Vinokurov^a, V. P. Zlomanov^a, S. Yu. Gavrilkin^b, O. M. Ivanenko^b, K. V. Mitsen^b, L. I. Ryabova^a, D. R. Khokhlov<sup>a

a</sup> Lomonosov Moscow State University
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located $\sim$20 meV below the conduction-band bottom. The electron mobility is as high as 10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$ in the samples with $N_V\le$ 0.21 at% and proves to be more than an order of magnitude higher in the samples with the highest vanadium content $N_V$ = 0.26 at%. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations.

Received: 20.04.2010
Accepted: 26.04.2010

 English version: Semiconductors, 2010, 44:12, 1543–1547

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