A. B. Pevtsov, S. A. Grudinkin, A. N. Poddubnyi, S. F. Kaplan, D. A. Kurdyukov, V. G. Golubev, “Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO$_2$ composites in the 1.3–1.6 $\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 12,Pages 1585

This article is cited in 11 papers

Electronic and optical properties of semiconductors

Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO$_2$ composites in the 1.3–1.6 $\mu$m spectral range

A. B. Pevtsov, S. A. Grudinkin, A. N. Poddubnyi, S. F. Kaplan, D. A. Kurdyukov, V. G. Golubev

Ioffe Institute, St. Petersburg

Abstract: The parameters of three-dimensional photonic crystals based on opal-VO$_2$ composite films in the 1.3–1.6 $\mu$m spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25–0.6) wherein the composite exhibits the properties of a three-dimensional insulator photonic crystal. On the basis of the opal-VO$_2$ composites, three-dimensional photonic film crystals are synthesized with specified parameters that provide a maximum shift of the photonic band gap in the vicinity of the wavelength $\sim$1.5 $\mu$m ($\sim$170 meV) at the semiconductor-metal transition in VO$_2$.

Received: 13.04.2010
Accepted: 23.04.2010