This article is cited in 6 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

A. I. Mashin^a, A. V. Nezhdanov^a, D. O. Filatov^b, M. A. Isakov^b, V. G. Shengurov^b, V. Yu. Chalkov^b, S. A. Denisov<sup>b

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled Ge$_x$Si$_{1-x}$/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH$_4$ ambient. The lines related to vibrational modes Si–Si, Ge–Ge, and Si–Ge are identified in the Raman spectra measured in the regions with dimensions $<$ 100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction $x$ in the Ge$_x$Si$_{1-x}$ alloy and of the elastic strain $\varepsilon$ (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of $x$ and $\varepsilon$ on the islands’ growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

Received: 08.04.2010
Accepted: 12.04.2010

 English version: Semiconductors, 2010, 44:11, 1504–1510

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