This article is cited in 1 paper

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Tunneling electron transport through heterobarriers with nanometer heterogeneities

V. A. Kozlov, V. A. Verbus

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The effect of spherical quantum objects (scatterers) embedded into semiconductor barriers on the tunnel-current flow through them is studied. For this purpose, the problem of scattering on steplike spherically symmetric potential of the scatterer is solved for the incident and reflected electron wave functions damped (at the energy lower than the barrier potential). It is shown that the vortex current structures can arise inside the barrier in this case.

Received: 08.04.2010
Accepted: 20.04.2010

 English version: Semiconductors, 2010, 44:11, 1499–1503

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