N. V. Baidus, P. A. Belevskii, A. A. Biryukov, V. V. Vainberg, M. N. Vinoslavskii, A. V. Ikonnikov, B. N. Zvonkov, A. S. Pilipchuk, V. N. Poroshin, “Lateral transport and far-infrared radiation of electrons in In$_x$Ga$_{1-x}$As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages 1543

This article is cited in 9 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Lateral transport and far-infrared radiation of electrons in In$_x$Ga$_{1-x}$As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field

N. V. Baidus^a, P. A. Belevskii^b, A. A. Biryukov^a, V. V. Vainberg^b, M. N. Vinoslavskii^b, A. V. Ikonnikov^c, B. N. Zvonkov^a, A. S. Pilipchuk^b, V. N. Poroshin^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute of Physics, National Academy of Sciences of Ukraine, Kiev
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: It is shown that the far-infrared radiation of electrons in the selectively doped heterostructures with double tunnel-coupled quantum wells in high lateral electric fields strongly depends on the level of doping of the wells. At a high impurity concentration in a narrow well, higher than (1–2) $\times$ 10$^{11}$ cm$^{-2}$, the radiation is caused only by indirect intrasubband electron transitions. At a lower concentration, along with the indirect transitions, the direct intersubband transitions also contribute to the radiation. These transitions become possible in high electric fields due to the real-space electron transfer between the quantum wells.

Received: 08.04.2010
Accepted: 20.04.2010