A. V. Ikonnikov, K. E. Spirin, V. I. Gavrilenko, D. V. Kozlov, O. Drachenko, H. Schneider, M. Helm, “The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1539

This article is cited in 7 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields

A. V. Ikonnikov^a, K. E. Spirin^a, V. I. Gavrilenko^a, D. V. Kozlov^a, O. Drachenko^b, H. Schneider^b, M. Helm^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Dresden High Magnetic Field Laboratory and Institute of Ion-Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O.Box 510119, 01314 Dresden, Germany

Abstract: The spectra of the cyclotron resonance of holes in the InGaAs/GaAs selectively doped heterostructures with quantum wells are studied in pulsed magnetic fields as high as 50 T at 4.2 K. The previously observed effect of the inverted (compared with the results of the single-particle calculation of the Landau levels) ratio of the spectral weight of two split components of the line of the cyclotron resonance, which is attributed to the effects of the exchange interaction of holes, is confirmed. It is found that the ratios of intensities of the components of the line of the cyclotron resonance profoundly differ on the ascending and descending branches of the magnetic field pulse, which may be associated with a long time of the spin relaxation of holes between the two lowest Landau levels, which constitute tens of milliseconds.

Received: 08.04.2010
Accepted: 08.04.2010