V. B. Shmagin, V. P. Kuznetsov, K. E. Kudryavtsev, S. V. Obolensky, V. A. Kozlov, Z. F. Krasil'nik, “Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes <nobr>$p^+/n^+/n$</nobr>-Si:Er”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1533

This article is cited in 2 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er

V. B. Shmagin^a, V. P. Kuznetsov^b, K. E. Kudryavtsev^a, S. V. Obolensky^c, V. A. Kozlov^a, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod

Abstract: The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) $p^+/n^+/n$-Si:Er, emitting under reverse bias on the $p^+/n^+$ junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavelength $\lambda\approx$ 1.5 $\mu$m ($\sim$5 $\mu$W), external quantum efficiency ($\sim$10$^{-5}$), and excitation efficiency of erbium ions ($\sim$2 $\times$ 10$^{-20}$ cm$^2$ s) have been determined. At the same excitation efficiency, tunnel transit-time LEDs exhibit higher emission power in comparison with $p^+/n$-Si:Er diode structures. The experimental results are compared with the model predictions for these structures. The factors limiting the electroluminescence intensity and impact excitation efficiency for erbium ions in tunnel transit-time LEDs are discussed.

Received: 08.04.2010
Accepted: 20.04.2010