S. V. Morozov, K. V. Marem'yanin, I. V. Erofeeva, A. N. Yablonskii, A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, V. I. Gavrilenko, “Kinetics of terahertz photoconductivity in <nobr>$p$</nobr>-Ge under impurity breakdown conditions”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1523

This article is cited in 10 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Kinetics of terahertz photoconductivity in $p$-Ge under impurity breakdown conditions

S. V. Morozov, K. V. Marem'yanin, I. V. Erofeeva, A. N. Yablonskii, A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, V. I. Gavrilenko

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Relaxation times of impurity photoconductivity in $p$-Ge samples excited by a nanosecond narrow-band source of terahertz radiation are studied at various bias voltages. It is shown that the relaxation time in prebreakdown fields increases with the applied electric field and decreases as the impurity breakdown field is exceeded. Nonmonotonic photoconductivity kinetics is observed in the studied samples differing by acceptor concentrations and degrees of compensation when approaching the impurity breakdown field.

Received: 08.04.2010
Accepted: 08.04.2010