A. N. Yablonskii, B. A. Andreev, L. V. Krasil’nikova, D. I. Kryzhkov, V. P. Kuznetsov, Z. F. Krasil'nik, “Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1519

This article is cited in 3 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

A. N. Yablonskii^a, B. A. Andreev^a, L. V. Krasil’nikova^a, D. I. Kryzhkov^a, V. P. Kuznetsov^b, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The excitation spectra and kinetics of erbium photoluminescence and silicon interband photoluminescence in Si:Er/Si structures under conditions of high-intensity pulse optical excitation are studied. It is shown that, in the interband photoluminescence spectra of the Si:Er/Si structures, both the luminescence of free excitons and the emission associated with the electron-hole plasma can be observed, depending on the excitation power and wavelength. It is found that the formation of a peak in the erbium photoluminescence excitation spectra at high pumping powers correlates with the Mott transition from the exciton gas to the electron-hole plasma. It is demonstrated that, in the Si:Er/Si structures, the characteristic rise times of erbium photoluminescence substantially depend on the concentration of charge carriers.

Received: 08.04.2010
Accepted: 08.04.2010