This article is cited in 2 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region

A. V. Antonov, N. V. Vostokov, M. N. Drozdov, L. D. Moldavian, V. I. Shashkin, O. I. Khrykin, A. N. Yablonskii

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: InAs/GaAs multilayered heterostructures containing dense arrays of the low-defect partially relaxed InAs nanoclusters larger than defect-free quantum dots are fabricated by metal-organic chemical vapor deposition in an atmospheric-pressure reactor. The structures have intense photoconductivity in the wavelength range of 1–2 $\mu$m at room temperature. The detectivity of fabricated prototypes of photodetectors is $D^*$ = 10$^9$ cm Hz$^{1/2}$ W$^{-1}$. The relaxation time of photoconductivity at a wavelength of 1.5 $\mu$m is less than 10 ns.

Received: 08.04.2010
Accepted: 08.04.2010

 English version: Semiconductors, 2010, 44:11, 1464–1466

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