This article is cited in 1 paper

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Temperature dependence of inverse population on intracenter transitions of shallow impurity centers in semiconductors

E. E. Orlova

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Analysis of the main factors of the temperature dependence of inverse population on shallow-impurity transitions in semiconductors is carried out in the context of the four-level inversion scheme: the population of the lower state of the laser transition by heating from the ground state and a decrease in the population of the long-lived impurity state due to thermal ionization and an increase in the rate if direct recombination to the ground state with optical-phonon emission occurs. The temperatures at which these factors become substantial are determined. It is shown that thermal ionization from the long-lived state is the major factor determining the temperature quenching of stimulated emission upon shallow-donor transitions in silicon.

Received: 08.04.2010
Accepted: 20.04.2010

 English version: Semiconductors, 2010, 44:11, 1457–1463

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