A. I. Belov, A. N. Mikhaylov, D. E. Nikolichev, A. V. Boryakov, A. P. Sidorin, A. P. Grachev, A. V. Ershov, D. I. Tetelbaum, “Formation and “white” photoluminescence of nanoclusters in SiO<nobr>$_x$</nobr> films implanted with carbon ions”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1498

This article is cited in 11 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Formation and “white” photoluminescence of nanoclusters in SiO$_x$ films implanted with carbon ions

A. I. Belov, A. N. Mikhaylov, D. E. Nikolichev, A. V. Boryakov, A. P. Sidorin, A. P. Grachev, A. V. Ershov, D. I. Tetelbaum

Lobachevsky State University of Nizhny Novgorod

Abstract: Experimental data on ion synthesis of nanocomposite layers with carbon-rich clusters and silicon nanocrystals by irradiation of nonstoichiometric silicon oxide (SiO$_x$) films with carbon ions followed by high-temperature annealing are reported. It is shown that, at rather high doses of C$^+$ ions, the resulting films exhibit photoluminescence with a spectrum that encompass the entire visible and near-infrared regions. The formation of carbon-rich clusters and silicon nanocrystals is confirmed by X-ray photoelectron spectroscopy data. The distribution of carbon practically reproduces the calculated profile of ion ranges, suggesting that there is no noticeable diffusive redistribution of carbon. A qualitative model of the layered structure of ion-synthesized structures is suggested.

Received: 08.04.2010
Accepted: 20.04.2010