Abstract:
Features of controlling the wavelength of emission from laser heterostructures with strained InGaAs/GaAs quantum wells by irradiation with medium-energy (with the energy as high as 150 keV) protons are studied. It is established that irradiation with H$^+$ ions and subsequent thermal annealing at a temperature of 700$^\circ$C make it possible to decrease the wavelength of emission from quantum wells. As the dose of ions is increased from 10$^{13}$ to 10$^{16}$ cm$^{-2}$, the magnitude of change in the wavelength increases to 20 nm. Starting with a dose of 10$^{15}$ cm$^{-2}$, a significant decrease in the intensity of emission is observed. The optimum dose of H$^+$ ions
(6 $\times$ 10$^{14}$ cm$^{-2}$) and annealing temperature (700$^\circ$C) for modifying the InGaAs/GaAs/InGaP laser structures are determined; it is shown that, in this case, one can obtain a shift of $\sim$(8–10) nm for the wavelength of laser radiation with low losses in intensity with the quality of the surface of laser structures retained. The observed “blue” shift is caused by implantation-stimulated processes of intermixing of the In and Ga atoms at the InGaAs/GaAs interface.
Fulltext:
PDF file (192 kB)
