This article is cited in 1 paper

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Inversionless amplification in semiconductor nanostructures: A way to create a frequency-tunable laser of far-infrared and terahertz radiation

V. A. Kukushkin

Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: A scheme of a far-infrared and terahertz amplifier or laser based on a semiconductor nanostructure, consisting of a superlattice of double quantum wells of a certain design placed into a planar metal waveguide and pumped by a CO$_2$ laser, is suggested. The structure operation is based on the inversionless mechanism of electromagnetic field amplification, which allows passing to room-temperature operation (in the pulsed mode) and significant (by a factor of more than 1.7) variation in the output radiation frequency by simple variation in the pump intensity. A laser based on such a scheme can be a convenient and easily tunable source of infrared and terahertz radiation for both basic research and various applications.

Received: 08.04.2010
Accepted: 08.04.2010

 English version: Semiconductors, 2010, 44:11, 1435–1440

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