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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 11, Pages 1478–1482 (Mi phts8972)

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Low-field anomaly of the Hall effect in disordered two-dimensional systems

A. V. Germanenkoa, G. M. Minkovb, O. E. Ruta, I. V. Soldatova, A. A. Sherstobitovb

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.

Received: 08.04.2010
Accepted: 08.04.2010


 English version:
Semiconductors, 2010, 44:11, 1430–1434

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