XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

E. L. Shangina^a, K. V. Smirnov^a, D. V. Morozov^a, V. V. Kovalyuk^a, G. N. Gol'tsman^a, A. A. Verevkin^ab, A. I. Toropov<sup>c

a</sup> Moscow State Pedagogical University
^b Rutgers University, NJ, 08854, Piscataway, USA
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB $(f_{3\mathrm{dB}})$ is varied from 150 to 250 MHz with a change in the concentration $n_s$ according to the power law $f_{3\mathrm{dB}}\propto n_s^{-0.5}$ due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility ($\mu>$ 3 $\times$ 10$^5$ cm$^2$ V$^{-1}$ s$^{-1}$ at 4.2 K).

Received: 08.04.2010
Accepted: 26.04.2010

 English version: Semiconductors, 2010, 44:11, 1427–1429

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