I. A. Derebezov, V. A. Gaisler, A. K. Bakarov, A. K. Kalagin, A. I. Toropov, M. M. Kachanova, T. A. Gavrilova, O. I. Semenova, D. B. Tret'yakov, I. I. Beterov, V. M. Èntin, I. I. Ryabtsev, “Single-mode vertical-cavity surface emitting lasers for <nobr>$^{87}$</nobr>Rb-based chip-scale atomic clock”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1470

This article is cited in 10 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Single-mode vertical-cavity surface emitting lasers for $^{87}$Rb-based chip-scale atomic clock

I. A. Derebezov, V. A. Gaisler, A. K. Bakarov, A. K. Kalagin, A. I. Toropov, M. M. Kachanova, T. A. Gavrilova, O. I. Semenova, D. B. Tret'yakov, I. I. Beterov, V. M. Èntin, I. I. Ryabtsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The results of numerical simulation and study of lasing characteristics of semiconductor verticalcavity surface-emitting lasers based on Al$_x$Ga$_{1-x}$As alloys are presented. Lasers exhibit stable single-mode lasing at a wavelength of 795 nm at low operating currents $\sim$1.5 mA and an output power of 350 $\mu$W, which offers prospects of their applications in next-generation chip-scale atomic clocks.

Received: 08.04.2010
Accepted: 13.04.2010