This article is cited in 1 paper

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

V. A. Belyakov, A. A. Konakov, V. A. Burdov

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The rate of tunnel migration of excited charge carriers (electrons and holes) in the array of silicon nanocrystals doped with phosphorus is calculated. It is shown that, starting from certain phosphorus concentrations dependent on the relation between the dimensions of the emitting and accepting nanocrystals, the rate of tunneling of electrons sharply decreases (by several orders of magnitude) and becomes lower than the rate of interband radiative recombination.

Received: 08.04.2010
Accepted: 12.04.2010

 English version: Semiconductors, 2010, 44:11, 1418–1421

Bibliographic databases:

•