This article is cited in 15 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Resonance structure of the rate of Auger recombination in silicon nanocrystals

N. V. Kurova, V. A. Burdov

Lobachevsky State University of Nizhny Novgorod

Abstract: The rate of Auger recombination in silicon nanocrystals is calculated in the context of the approximation of the envelope function. It is shown that the dependence of the rate on the crystallite radius is an essentially unsteadily varying function with characteristic variations within three or four orders of magnitude. The maximum rates of Auger recombination in silicon are reached at certain “resonance” nanocrystal dimensions, such that the energy of the basic interband transition coincides with the energy of some intraband transition.

Received: 08.04.2010
Accepted: 12.04.2010

 English version: Semiconductors, 2010, 44:11, 1414–1417

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