This article is cited in 54 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

D. V. Fateev^a, V. V. Popov^a, M. S. Shur<sup>b

a</sup> Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
^b Department of Electrical, Computer, and System Engineering and Center for Integrated Electronics, CII9015, Rensselaer Polytechnic Institute, Troy, 12180 New York, USA

Abstract: We present the theory of plasmon excitation in a grating-gate transistor structure with spatially modulated 2D electron channel. The plasmon spectrum varies depending on the electron density modulation in the transistor channel. We report on the frequency ranges of plasmon mode excitation in the gated and ungated regions of the channel and on the interaction of these different types of plasmon modes. We show that a constructive influence of the ungated regions of the electron channel considerably increases the intensity of the gated plasmon resonances and reduces the plasmon-resonance linewidth in the grating-gated transistor structure.

Received: 13.04.2010
Accepted: 13.04.2010

 English version: Semiconductors, 2010, 44:11, 1406–1413

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