L. E. Vorob'ev, M. Ya. Vinnichenko, D. A. Firsov, V. L. Zerova, V. Yu. Panevin, A. N. Sofronov, P. Thumrongsilapa, V. M. Ustinov, A. E. Zhukov, A. P. Vasil'ev, L. Shterengas, G. Kipshidze, T. Hosoda, G. Belenky, “Carrier heating in quantum wells under optical and current injection of electron-hole pairs”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1451

This article is cited in 11 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Carrier heating in quantum wells under optical and current injection of electron-hole pairs

L. E. Vorob'ev^a, M. Ya. Vinnichenko^a, D. A. Firsov^a, V. L. Zerova^a, V. Yu. Panevin^a, A. N. Sofronov^a, P. Thumrongsilapa^a, V. M. Ustinov^b, A. E. Zhukov^c, A. P. Vasil'ev^b, L. Shterengas^d, G. Kipshidze^d, T. Hosoda^d, G. Belenky^d

^a Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Department of Electrical and Computer Engineering, State University of New York at Stony Brook, 11794 New York, USA

Abstract: Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.

Received: 08.04.2010
Accepted: 12.04.2010