This article is cited in 1 paper

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

M. M. Prokof'eva^a, M. V. Dorokhin^b, Yu. A. Danilov^b, A. V. Kudrin^b, O. V. Vikhrova<sup>b

a</sup> National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

Received: 08.04.2010
Accepted: 20.04.2010

 English version: Semiconductors, 2010, 44:11, 1398–1401

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