D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentev, A. N. Sofronov, L. E. Vorob'ev, A. V. Andrianov, A. O. Zahar'in, V. S. Mikhrin, A. P. Vasil'ev, A. E. Zhukov, L. V. Gavrilenko, V. I. Gavrilenko, A. V. Antonov, V. Ya. Aleshkin, “Terahertz emission and photoconductivity in <nobr>$n$</nobr>-type GaAs/AlGaAs quantum wells: the role of resonant impurity states”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 11,Pages <nobr>1443

This article is cited in 14 papers

XIV Annual International Workshop ''Nanophysics and Nanoelectronics 2010''

Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

D. A. Firsov^a, V. A. Shalygin^a, V. Yu. Panevin^a, G. A. Melentev^a, A. N. Sofronov^a, L. E. Vorob'ev^a, A. V. Andrianov^b, A. O. Zahar'in^b, V. S. Mikhrin^b, A. P. Vasil'ev^b, A. E. Zhukov^c, L. V. Gavrilenko^d, V. I. Gavrilenko^d, A. V. Antonov^d, V. Ya. Aleshkin^d

^a Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.

Received: 08.04.2010
Accepted: 08.04.2010