This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates

A. A. Lebedev, A. M. Strel'chuk, D. V. Shamshur, G. A. Oganesyan, S. P. Lebedev, M. G. Mynbaeva, A. V. Sadokhin

Ioffe Institute, St. Petersburg

Abstract: Multigraphene films grown by sublimation of the surface of semi-insulating 6H-SiC substrates in a vacuum have been studied. The films exhibit a semiconductor-type conductivity. A conclusion is made that this type of conduction is supposedly determined by defects present between separate graphene crystals constituting the carbon layers under study.

Received: 16.03.2010
Accepted: 22.03.2010

 English version: Semiconductors, 2010, 44:10, 1389–1391

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