This article is cited in 12 papers

Manufacturing, processing, testing of materials and structures

Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

A. A. Vol'fson, E. N. Mokhov

Ioffe Institute, St. Petersburg

Abstract: The dependence of the layer growth rate on nitrogen pressure in a reactor has been examined in order to analyze the conditions of growth of AlN thick layers and bulk crystals by the sublimation sandwich method. It is shown that the layer growth rate steadily increases as the pressure in the reactor is lowered within the range 1–0.02 bar. This suggests that a key role in the layer growth kinetics is played by the source-to-substrate transfer of the components (Al, N), rather than by their adsorption (desorption) on the substrate surface.

Received: 08.04.2010
Accepted: 13.04.2010

 English version: Semiconductors, 2010, 44:10, 1383–1385

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