N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin, A. A. Marmalyuk, A. A. Podoskin, I. S. Tarasov, “The temperature dependence of internal optical losses in semiconductor lasers (<nobr>$\lambda$</nobr> = 900–920 nm)”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 10,Pages <nobr>1411

This article is cited in 11 papers

Semiconductor physics

The temperature dependence of internal optical losses in semiconductor lasers ($\lambda$ = 900–920 nm)

N. A. Pikhtin^a, S. O. Slipchenko^a, I. S. Shashkin^a, M. A. Ladugin^b, A. A. Marmalyuk^b, A. A. Podoskin^a, I. S. Tarasov^a

^a Ioffe Institute, St. Petersburg
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The temperature dependences of radiative characteristics of semiconductor lasers based on asymmetric heterostructures of the separate confinement with an extended waveguide fabricated by MOCVD epitaxy (the emission wavelength $\lambda$ = 900–920 nm) are studied. It is established that the threshold concentration in the active region and waveguide layers of the laser heterostructure of the separate confinement increases in the CW lasing mode as the pumping current and temperature of the active region are increased. It is established experimentally that, in the temperature range of 20–140$^\circ$C, the stimulated quantum yield remains unchanged. It is shown that the temperature delocalization of charge carriers leads to an increase in the carrier concentration in the waveguide layers of the laser heterostructure. The total increase in internal optical losses due to scattering by free charge carriers in the layers of the active region and waveguide layers of the laser heterostructure leads to a decrease in the differential quantum efficiency and to saturation of the watt-ampere characteristic of semiconductor lasers in the continuous lasing mode.

Received: 05.04.2010
Accepted: 12.04.2010