This article is cited in 1 paper

Semiconductor physics

Recombination of charge carriers in the GaAs-based $p$–$i$–$n$ diode

G. I. Ayzenshtat^a, A. Yu. Yushchenko^b, S. M. Gushchin^c, D. V. Dmitriev^d, K. S. Zhuravlev^d, A. I. Toropov<sup>d

a</sup> Tomsk State University
^b Tomsk State University of Control Systems and Radioelectronics
^c Scientific-Research Institute of Semiconductor Devices, Tomsk
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based $p$–$i$–$n$ diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave $p$–$i$–$n$ diodes.

Received: 23.03.2010
Accepted: 30.03.2010

 English version: Semiconductors, 2010, 44:10, 1362–1364

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