N. Yu. Gordeev, I. I. Novikov, A. M. Kuznetsov, Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Chunareva, A. S. Payusov, D. A. Livshits, A. R. Kovsh, “A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 10,Pages <nobr>1401

This article is cited in 6 papers

Semiconductor physics

A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

N. Yu. Gordeev^ab, I. I. Novikov^ab, A. M. Kuznetsov^b, Yu. M. Shernyakov^ab, M. V. Maksimov^ab, A. E. Zhukov^ab, A. V. Chunareva^ab, A. S. Payusov^b, D. A. Livshits^c, A. R. Kovsh^c

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Innolume GmbH, 44263 Dortmund, Deutschland

Abstract: The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-$\mu$m wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.

Received: 23.03.2010
Accepted: 30.03.2010