This article is cited in 13 papers

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon

A. Yu. Karlach, G. V. Kuznetsov, S. V. Litvinenko, Yu. S. Milovanov, V. A. Skryshevsky

National Taras Shevchenko University of Kyiv

Abstract: Impedance and optical properties of pressed composites based on microcrystalline and nanoporous silicon powders were studied. Porous silicon crystallites were obtained by stain etching of initial microcrystalline silicon powder. Oxygen passivation of the surface during porous-powder formation provided stability of composite characteristics. An analysis of experimental dependences of the impedance in a frequency range of 1–10$^6$ Hz allowed separation of contributions of grain bulk and crystallite interfaces to the total composite conductivity. The results of the study of the time dependences of the impedance were used to determine the variation rates of electrical parameters of composite structures under dynamic adsorption-desorption influence of external reactants (H$_2$O and C$_2$H$_5$OH).

Received: 17.02.2010
Accepted: 11.03.2010

 English version: Semiconductors, 2010, 44:10, 1342–1348

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