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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 10, Pages 1365–1371 (Mi phts8951)

This article is cited in 2 papers

Low-dimensional systems

Simulation of relaxation times and energy spectra of the CdTe/Hg$_{1-x}$Cd$_x$Te/CdTe quantum well for variable valence band offset, well width, and composition $x$

E. A. Melezhik, Zh. V. Gumenyuk-Sychevskaya, F. F. Sizov

Institute of Semiconductor Physics NAS, Kiev

Abstract: The dependences of relaxation times and energy spectrum of the CdTe/Hg$_{1-x}$Cd$_x$Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 $< x <$ 0.16. It was found that the $x$ increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and $x$ close to 0.16.

Received: 04.03.2010
Accepted: 07.04.2010


 English version:
Semiconductors, 2010, 44:10, 1321–1327

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