E. S. Shatalina, S. A. Blokhin, A. M. Nadtochiy, A. S. Payusov, A. V. Savel'ev, M. V. Maksimov, A. E. Zhukov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, “Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 10,Pages 1352

This article is cited in 10 papers

Low-dimensional systems

Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots

E. S. Shatalina^a, S. A. Blokhin^ab, A. M. Nadtochiy^ab, A. S. Payusov^a, A. V. Savel'ev^a, M. V. Maksimov^ab, A. E. Zhukov^a, N. N. Ledentsov^b, A. R. Kovsh^c, S. S. Mikhrin^c, V. M. Ustinov^b

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Innolume GmbH, 44263 Dortmund, Deutschland

Abstract: With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated layer of quantum dots separated by wide (Al,Ga)As spacer layers. At a small width of the (Al,Ga)As spacer layer, when electron binding of separate layers of the quantum dots in the vertical direction takes place, the role of the tunneling mechanism of carrier emission between the vertically coupled quantum dots increases.

Received: 23.03.2010
Accepted: 30.03.2010