Low-dimensional systems

Mixing of hole states in GaAs/AlAs(110) heterostructures

V. N. Chernyshov<sup>ab

a</sup> Siberian Physical-Technical Institute of the Tomsk State University
^b Tomsk Polytechnic University

Abstract: States in the AlAs/GaAs(12)/AlAs(110) quantum well and AlAs(6)/GaAs(12)(110) superlattice are considered. For analysis of mixing of light- and heavy-hole states in these structures, a parameter-dependent set of basis functions is suggested and the values of the parameter at which one of the functions describes basically heavy-hole states and the other light-hole states are determined. For the energy region considered in the study, four energy levels are determined in the AlAs/GaAs(12)/AlAs(110) quantum well and, correspondingly, four minibands in the AlAs(6)/GaAs(12)(110) superlattice. Analysis shows that the first and fourth levels in the quantum well and the first and fourth minibands in the superlattice are related basically to heavy-hole states. The other two states in the quantum well and the second and third minibands in the super-lattice are structurally more complex: in these states and minibands, the hole states are noticeably mixed. In these minibands, states are substantially separated in space and in spin.

Received: 13.01.2010
Accepted: 03.03.2010

 English version: Semiconductors, 2010, 44:10, 1301–1307

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