This article is cited in 2 papers

Semiconductor structures, interfaces and surfaces

Differential capacitance of a semiconductor film

D. E. Tsurikov, A. M. Yafyasov

St. Petersburg State University, Faculty of Physics

Abstract: A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation ($n$-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects.

Received: 23.03.2010
Accepted: 14.04.2010

 English version: Semiconductors, 2010, 44:10, 1292–1296

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