Semiconductor physics

High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)

S. O. Slipchenko^a, A. A. Podoskin^a, I. V. Shushkanov^a, M. Kondratov^a, A. E. Grishin^a, A. Rizaev^a, V. V. Shamakhov^a, I. S. Shashkin^a, D. N. Nikolaev^a, N. A. Pikhtin^a, A. S. Bashkatov^b, T. A. Bagaev^c, M. A. Ladugin^c, A. A. Marmalyuk^c, V. A. Simakov<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Mytishchinsky Radio Frequency Measuring Instrument Research Institute
^c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: AlGaAs/GaAs heterostructures with thick $p$-base (8 $\mu$m) have been developed for thyristors, and current switches based on these structures have been created. In static mode, a maximum blocked voltage of 120 V has been demonstrated. Minimum turn-on delays reached 7 ns under control current of 220 mA. It was shown that generation of pulse sequences with frequency up to 20 kHz at operating voltage of 110 V and up to 120 kHz at operating voltage of 30 V is possible. Evaluation of dynamic characteristics indicates the capability of generating current pulses with amplitude of 68 A and duration of 2.9 ns.

Received: 12.12.2025
Revised: 22.12.2025
Accepted: 26.12.2025

DOI: 10.61011/FTP.2025.10.62344.8880