Semiconductor structures, low-dimensional systems, quantum phenomena

Laser emission in a mesastructure with HgCdTe-based quantum wells with a periodic ridge system

E. N. Kiryanova^ab, V. V. Rumyantsev^ab, A. A. Razova^ab, D. V. Shengurov^a, N. S. Gusev^a, E. E. Morozova^a, V. V. Utochkin^a, V. R. Baryshev^c, A. A. Yantser^a, K. A. Mazhukina^a, M. A. Fadeev^a, N. S. Ginzburg^c, A. M. Malkin^c, E. D. Egorova^c, N. N. Mikhailov^d, S. A. Dvoretskii^d, V. I. Gavrilenko^ab, S. V. Morozov<sup>ab

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: In a waveguide structure with HgCdTe quantum wells single-frequency laser emission at a wavelength of 13.5 $\mu$m is demonstrate due to the formation of a periodic system of ridges on the surface of the structure, implementing distributed feedback. It is shown that the ion etching technology used does not lead to an increase in the threshold intensity of optical pumping, which does not exceed 100 W/cm$^2$ at $T <$ 20 K.

Received: 15.10.2025
Revised: 03.12.2025
Accepted: 05.12.2025

DOI: 10.61011/FTP.2025.10.62342.8664