Non-electronic properties of semiconductors (atomic structure, diffusion)

High-temperature manganese diffusion into KDB-3 silicon: formation of Mn$_5$Si$_3$ and B$_6$Si phases, morphology and electrophysical properties

N. F. Zikrillaev^a, S. O. Saidov^b, N. Yu. Sharibaev^c, G. Kh. Mavlonov^a, Y. A. Abduganiev^a, E. S. Nazarov^b, I. O. Kosimov^d, A. K. Ergashev<sup>c

a</sup> Tashkent State Technical University named after Islam Karimov
^b Bukhara State University
^c Namangan State Technical University
^d A. S. Sadykov Institute of Bioorganic Chemistry of the Academy of Sciences of Republic Uzbekistan, Tashkent

Abstract: The formation of structural, phase and electrophysical properties of KDB-3 silicon after high-temperature manganese diffusion at 1100$^\circ$C in a sealed ampoule is investigated. X-ray phase analysis shows the formation of a surface two-phase layer containing intermetallic Mn$_5$Si$_3$ and borosilicide B$_6$Si, with a high fraction of amorphous component. Scanning electron microscopy reveals a pronounced multi-scale relief comprising macro-, micro- and nanostructured elements that reflect heterogeneous material redistribution during diffusion. Electrophysical measurements demonstrate a significant increase in resistivity, reduction of carrier mobility and decrease in carrier concentration, which are attributed to the combined effect of the amorphous matrix and distributed silicide inclusions. The results establish clear links between phase composition, morphology and charge transport in Si:Mn and clarify mechanisms governing the functional properties of modified KDB-3 silicon.

Received: 25.07.2025
Revised: 27.11.2025
Accepted: 28.11.2025

DOI: 10.61011/FTP.2025.10.62341.8429