Abstract:
The dependence of the integrated intensity of spontaneous emission of holes in Ga-doped Ge excited by a pulsed electric field with the strength $E$ up to 3 kV cm$^{-1}$ under uniaxial compression in the [001] and [111] directions with pressure $P$ up to 12 kbar is studied. It is established that the emission intensity in a high electric field is controlled by the processes of excitation and relaxation of light holes even at $P$ = 0. It is found that a substantial contribution to the emission is made by hot holes with energies much higher than the optical phonon energy in Ge. The spontaneous emission spectra of hot holes in a high electric field are recorded and interpreted for the first time. At $P$ = 0 and $E >$ 500 V cm$^{-1}$, the energy of holes is not limited by the optical phonon energy and the emission spectrum of holes in the range 45–85 meV exhibits a structure similar to that of the absorption spectra of optical phonons. This is indicative of the accumulation of hot holes on strong interaction with crystal lattice vibrations in Ge. The features of this interaction are discussed.
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