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Electronic and optical properties of semiconductors
Specific features of intervalley scattering of charge carriers in $n$-Si at high temperatures
A. V. Fedosova,
S. V. Lunevb,
S. A. Fedosovc a Lutsk National Technical University
b Lutsk State Technical University
c Lesya Ukrainka East European National University
Abstract:
In
$n$-Si, intervalley scattering of electrons can be of two types,
$f$ scattering and
$g$ scattering. With the purpose of establishing the contributions of
$f$- and
$g$-type transitions to intervalley scattering, the piezoresistance of
$n$-Si crystals is studied in the temperature range
$T$ = 295–363 K. The initial concentration of charge carriers in the
$n$-Si samples is 1.1
$\times$ 10
$^{14}$ cm
$^{-3}$, and the resistivity at 300 K is
$\rho$ = 30
$\Omega$ cm. As the temperature is increased, the region of leveling-off of the piezoresistance shifts to lower voltages. The characteristic feature of the dependence
$\rho=\rho(T)$ plotted in the double logarithmic coordinates
(
$\operatorname{lg}\rho=f(\operatorname{lg}T)$) is the transition from the slope 1.68 to the slope 1.83 at
$T >$ 330 K. This is attributed to the substantial contribution of
$g$ transitions to intervalley scattering in the high-temperature region. For verification of the interpretation of the dependence
$\rho=\rho(T)$, the dependence is calculated on the basis of the theory of anisotropic scattering with consideration for intervalley transitions.
Received: 17.02.2010
Accepted: 15.03.2010
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