This article is cited in 1 paper

Atomic structure and non-electronic properties of semiconductors

Mesoscopic variance of dislocation displacements in semiconductor crystals

B. V. Petukhov

Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: It is shown that a large variance of dislocation displacements found experimentally and the delay in its relaxation to a steady value in semiconductor materials can be explained by the stochastic nature of the dislocation-kink formation. This stochastic nature results in the development of dislocation-line roughness described by the scaling relations, including the mesoscopic time and space scales.

Received: 04.03.2010
Accepted: 15.03.2010

 English version: Semiconductors, 2010, 44:10, 1258–1262

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