This article is cited in 1 paper

Atomic structure and non-electronic properties of semiconductors

Oxygen in Ge : Sn

L. I. Khirunenko^a, Yu. V. Pomozov^a, M. G. Sosnin^a, A. V. Duvanskii^a, N. V. Abrosimov^bc, H. Riemann<sup>c

a</sup> Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kiev, Ukraine
^b Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia
^c Institute of Crystal Growth, 12489 Berlin, Germany

Abstract: The effect of doping with tin on the $\nu_3$ vibrational mode of oxygen in Ge has been studied. The appearance of three new series of absorption lines besides the $\nu_3$ oxygen vibration spectra was found. The spectrum structure in each series of lines found is similar to the $\nu_3$ oxygen spectrum structure in Ge. But unlike the $\nu_3$ mode, the fine structure due to rotational–vibrational interaction of the $\nu_3$ and $\nu_2$ modes is not observed and the spectrum structure remains up to temperatures of 130 K. The found three sets of absorption lines are ascribed to the $\nu_3$ vibration of interstitial oxygen disturbed by tin atoms located in the nearest environment. The assumption has been made that no rotation of oxygen around a Ge–Ge bond for a Ge–O–Ge quasi-molecule disturbed by a neighbour Sn atom occurs.

Received: 04.03.2010
Accepted: 15.03.2010

Language: English

 English version: Semiconductors, 2010, 44:10, 1253–1257

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