This article is cited in 1 paper

Semiconductor physics

Conductance simulation in an $a$-Si:H thin-film transistor with Schottky barriers

A. V. Vishnyakov, M. D. Efremov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: It is shown by numerical simulation that the drain-source Schottky contacts substantially control the conductance of a thin-film transistor in the above-barrier region. At a barrier height in excess of 0.75 eV, the effect of crowding manifests itself; this effect is caused by an increase in electric field at the edge of the source electrode as the pulling voltage is increased, which brings about a local lowering of the barrier and an increase in the current through the reverse-biased Schottky barrier. The effective mobility in the thin-film transistor is controlled by the film and is independent of the barrier height.

Received: 11.09.2009
Accepted: 03.03.2010

 English version: Semiconductors, 2010, 44:9, 1249–1252

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