Semiconductor physics

EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescence

E. B. Yakimov^a, N. A. Sobolev<sup>b

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS
^b Ioffe Institute, St. Petersburg

Abstract: Silicon light-emitting diode structures with a near-band-edge luminescence have been studied by the EBIC method. The structures were fabricated by ion implantation with different temperatures of the final stage of the postimplantation annealing (950 and 1000$^\circ$C). Upon raising the annealing temperature, the diffusion length of minority carriers increases from 1–2 to 25–35 $\mu$m in the light-emitting diode region in which the near-band-edge luminescence occurs. Also, the distribution of nonradiative recombination centers in this region becomes less nonuniform in the lateral direction, parallel to the plane of the p-n junction. It is these factors that lead to the observed substantial increase in the intensity of the near-band-edge luminescence.

Received: 08.02.2010
Accepted: 16.02.2010

 English version: Semiconductors, 2010, 44:9, 1241–1243

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