This article is cited in 6 papers

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites

Effect of oxygen plasma on the properties of tantalum oxide films

V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, M. S. Skakunov, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University

Abstract: The effect of oxygen plasma on the leakage current, permittivity, and the dielectric loss tangent of Ta$_2$O$_5$ thin layers (300–400 nm) is studied. It is suggested to treat tantalum oxide films in oxygen plasma to control their electrical and dielectric characteristics.

Received: 30.12.2009
Accepted: 18.01.2010

 English version: Semiconductors, 2010, 44:9, 1227–1234

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