Semiconductor structures, interfaces and surfaces

Study of the $p$-Ge–$n$-GaAs heterojunction under hydrostatic pressure

M. M. Gadzhialiev, Z. Sh. Pirmagomedov, T. N. Efendieva

Daghestan Institute of Physics after Amirkhanov

Abstract: The current-voltage characteristic of the $p$-Ge–$n$-GaAs heterojunction is experimentally studied under hydrostatic pressure as high as 8 GPa and temperature of 300 K. The baric coefficient of the edge of the valence band of Ge is calculated using the experimental results.

Received: 23.11.2009
Accepted: 17.02.2010

 English version: Semiconductors, 2010, 44:9, 1185–1186

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