This article is cited in 1 paper

Semiconductor structures, interfaces and surfaces

Electrical characteristics of the CdTe–$n$-CdHgTe structure fabricated in a single molecular-beam epitaxy process

Yu. P. Mashukov, N. N. Mikhailov, V. V. Vasilyev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: An extraordinary shape of the capacitance-voltage characteristics of CdTe–CdHgTe structures has been detected; these characteristics include a specific “hump” in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a $p$-type semiconductor with an acceptor concentration of 1 $\times$ 10$^{16}$ cm$^{-3}$; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the “hump”; and the barrier height for holes at the CdTe–Cd$_{0.43}$Hg$_{0.57}$Te interface was determined as 0.13 eV.

Received: 21.01.2010
Accepted: 05.02.2010

 English version: Semiconductors, 2010, 44:9, 1180–1184

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