This article is cited in 8 papers

Semiconductor structures, interfaces and surfaces

Films of degenerate intrinsic oxides of InSe and In$_4$Se$_3$ semiconductor crystals

V. N. Katerinchuk, M. Z. Kovalyuk

Frantsevich Institute of Material Science Problems, Chernivtsi Department, Ukraine National Academy of Sciences, Chernivtsi, 58001, Ukraine

Abstract: The results of investigation of electric properties of oxide-$p$-InSe and oxide-$p$-In$_4$Se$_3$ heterojunctions, the front layer in which is obtained by the thermal oxidation of crystalline substrates, are presented. It is established that the forward portions of I–V characteristics of heterojunctions are similar to the forward portions of the I–V characteristics of metal-semiconductor diodes in which the majority carriers are involved in the charge transport. Therefore, the electric properties of heterojunctions are interpreted under the assumption that the intrinsic oxide is a degenerate semiconductor. For confirmation of the assumption, the data were compared to the results of the investigation carried out on the ITO–GaTe heterojunctions in which the ITO film was intentionally made degenerate.

Received: 24.11.2009
Accepted: 30.11.2009

 English version: Semiconductors, 2010, 44:9, 1176–1179

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