This article is cited in 2 papers

Electronic and optical properties of semiconductors

Indirect interband transitions in graphite with a wide quasigap

V. V. Sobolev^a, E. A. Antonov^a, V. Val. Sobolev<sup>b

a</sup> Udmurt State University, Izhevsk
^b Izhevsk State Technical University

Abstract: Sets of fundamental optical functions in the energy range of 0–40 eV for longitudinal indirect interband transitions in graphite with a quasi-gap up to 2.6 eV have been determined for the first time. Their structure and parameters depend strongly on the electron wave vector transfer $\mathbf{q}$. The nature of the peaks and shoulders of these functions is explained within the model of theoretical shifted bands for four electron wave vector transfers $\mathbf{q}$ in a volume characteristic electron-energy losses for the $\Gamma$–$P$ direction in the Brillouin zone. The calculations were performed on the basis of the known experimental volume characteristic electron-energy loss spectra of graphite in the range of 0–40 eV for $|\mathbf{q}|$ = 0.00, 0.375, 0.625, and 1.00 $\mathring{\mathrm{A}}^{-1}$ using a special software package.

Received: 18.12.2009
Accepted: 11.03.2010

 English version: Semiconductors, 2010, 44:9, 1170–1175

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